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Minos IRFP4868PBF-MNS product image
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Minos IRFP4868PBF-MNSRoHS

Manufacturer
MinosAsian Brands
MPN
IRFP4868PBF-MNS
LCSC Part #
C51933922
Packaging
TO-3P
Customer #
Key Attributes
300V 70A 4V 420W 32mΩ@10V 1 N-channel N-Channel TO-3P Single FETs, MOSFETs RoHS
Datasheetpdf iconMinos IRFP4868PBF-MNS
In-Stock: 262
262 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.294$ 2.29
10+$ 2.026$ 20.26
30+$ 1.857$ 55.71
90+$ 1.6848$ 151.63
450+$ 1.6068$ 723.06
900+$ 1.5727$ 1415.43
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMinos
PackagingTO-3P
Drain to Source Voltage300V
Current - Continuous Drain(Id)70A
Output Capacitance(Coss)895pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation420W
RDS(on)32mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)49pF
Number1 N-channel
Input Capacitance(Ciss)9.55nF
Gate Charge(Qg)155nC@10V
TypeN-Channel
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Introduction

AI Translation

IRFP4868PBF is a silicon N-channel enhancement-mode MOSFET fabricated using advanced MOSFET technology, offering reduced on-state losses, improved switching performance, and enhanced avalanche energy capability. This transistor is suitable for switched-mode power supplies, high-speed switching, and general-purpose applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 300 V, Drain Current (ID) = 70 A, Gate-Source Voltage (VGS) = 10 V, On-State Resistance (RDS(ON)) < 41 mΩ
  • Fast switching, low reverse transfer capacitance (Crss)
  • 100% avalanche tested, enhanced performance
  • Excellent dv/dt capability
  • RoHS compliant

Applications

AI Translation
  • High-frequency switch-mode power supply