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MSKSEMI SIR464DP-T1-GE3-MS product image
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MSKSEMI SIR464DP-T1-GE3-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
SIR464DP-T1-GE3-MS
LCSC Part #
C51927991
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
187W 30V 150A 1.2V 2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconMSKSEMI SIR464DP-T1-GE3-MS
In-Stock: 494
494 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4502$ 0.45
10+$ 0.3574$ 3.57
30+$ 0.3172$ 9.52
100+$ 0.2677$ 26.77
500+$ 0.2445$ 122.25
1,000+$ 0.2321$ 232.10
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN-8L(5x6)
Output Capacitance(Coss)340pF
Pd - Power Dissipation187W
Configuration-
Drain to Source Voltage30V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.345nF
Gate Charge(Qg)56.9nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

The SIR464DP-T1-GE3-MS employs advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications.

Features

AI Translation
  • VDS = 30 V
  • ID = 150 A
  • RDS(ON) < 2.4 mΩ VGS = 10 V

Applications

AI Translation
  • Battery Protection - Load Switch - Uninterruptible Power Supply