MSKSEMI IRFH7932PBF-MS
| Manufacturer | MSKSEMIAsian Brands |
| MPN | IRFH7932PBF-MS |
| LCSC Part # | C51908847 |
| Packaging | DFN-8L(5x6) |
| Customer # | |
| Key Attributes | 187W 30V 150A 1.2V 2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 340pF | |
| Pd - Power Dissipation | 187W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.345nF | |
| Gate Charge(Qg) | 56.9nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRFH7932PBF-MS utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 30 V, ID = 150 A
- RDS(ON) < 2.4 mΩ, VGS = 10 V
Applications
AI Translation
- Battery Protection - Load Switch - Uninterruptible Power Supply
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5255 | $ 0.53 |
| 10+ | $ 0.4158 | $ 4.16 |
| 30+ | $ 0.3694 | $ 11.08 |
| 100+ | $ 0.3107 | $ 31.07 |
| 500+ | $ 0.2859 | $ 142.95 |
| 1,000+ | $ 0.2705 | $ 270.50 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 340pF | |
| Pd - Power Dissipation | 187W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.345nF | |
| Gate Charge(Qg) | 56.9nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRFH7932PBF-MS utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 30 V, ID = 150 A
- RDS(ON) < 2.4 mΩ, VGS = 10 V
Applications
AI Translation
- Battery Protection - Load Switch - Uninterruptible Power Supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



