Guangdong Hottech 2N7002DW
| Manufacturer | Guangdong HottechAsian Brands |
| MPN | 2N7002DW |
| LCSC Part # | C5190214 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 60V 0.3A SOT-363 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Guangdong Hottech | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 300mW | |
| RDS(on) | 1.9Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 12pF | |
| Gate Charge(Qg) | 650pC@30V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NCE3065Q utilizes advanced trench technology and design to deliver excellent drain-source on-resistance (RDS(ON)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Low on-resistance: VDS = 60V, ID = 300mA, RDS(ON) ≤ 1.9Ω@VGS = 10
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- High saturation current capability
- Rugged and reliable
- ESD Protection
Applications
AI Translation
-DC/DC Converter - High-frequency switching and synchronous rectification
In-Stock: 61,820
61,820 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0258$ 0.0246 | $ 0.49 |
| 200+ | $ 0.0228$ 0.0217 | $ 4.34 |
| 600+ | $ 0.0211$ 0.0201 | $ 12.06 |
| 3,000+ | $ 0.0174$ 0.0166 | $ 49.80 |
| 9,000+ | $ 0.0165$ 0.0157 | $ 141.30 |
| 21,000+ | $ 0.0161$ 0.0153 | $ 321.30 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Guangdong Hottech | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 300mW | |
| RDS(on) | 1.9Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 12pF | |
| Gate Charge(Qg) | 650pC@30V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NCE3065Q utilizes advanced trench technology and design to deliver excellent drain-source on-resistance (RDS(ON)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Low on-resistance: VDS = 60V, ID = 300mA, RDS(ON) ≤ 1.9Ω@VGS = 10
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- High saturation current capability
- Rugged and reliable
- ESD Protection
Applications
AI Translation
-DC/DC Converter - High-frequency switching and synchronous rectification
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



