JSMSEMI AO4419
| Manufacturer | JSMSEMIAsian Brands |
| MPN | AO4419 |
| LCSC Part # | C5189727 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 9.7A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 9.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 295pF | |
| RDS(on) | 23.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 43.97nC@15V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The 4419 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching
Features
- -30V/-9.7A, RDS(ON)=19.5mΩ (typ.)@VGS=-10V
- -30V/-7.0A, RDS(ON)=18.5mΩ (typ.) @VGS=-4.5V
- Super high design for extremely low RDS(ON)
- Exceptional on-resistance and Maximum DC current capability
- Full RoHS compliance
- SOP8 package design
Applications
- High Frequency Point-of-Load Synchronous
- Newworking DC-DC Power System
- Load Switch
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.4344 | $ 2.17 |
| 50+ | $ 0.3648 | $ 18.24 |
| 150+ | $ 0.335 | $ 50.25 |
| 500+ | $ 0.2978 | $ 148.90 |
| 2,500+ | $ 0.2812 | $ 703.00 |
| 5,000+ | $ 0.2713 | $ 1356.50 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 9.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 295pF | |
| RDS(on) | 23.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 43.97nC@15V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The 4419 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching
Features
- -30V/-9.7A, RDS(ON)=19.5mΩ (typ.)@VGS=-10V
- -30V/-7.0A, RDS(ON)=18.5mΩ (typ.) @VGS=-4.5V
- Super high design for extremely low RDS(ON)
- Exceptional on-resistance and Maximum DC current capability
- Full RoHS compliance
- SOP8 package design
Applications
- High Frequency Point-of-Load Synchronous
- Newworking DC-DC Power System
- Load Switch
C5189727 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



