TECH PUBLIC 2N7002BKW
| Manufacturer | TECH PUBLICAsian Brands |
| MPN | 2N7002BKW |
| LCSC Part # | C51886151 |
| Packaging | SOT-323 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 300mA SOT-323 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-323 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Output Capacitance(Coss) | 7.3pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 250mW | |
| RDS(on) | 1.45Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 47.2pF | |
| Gate Charge(Qg) | 440pC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low on-resistance
- ESD-protected gate, up to 2kV HBM
- High-speed switching
- Simple gate drive circuitry
- Easy to use in parallel
Applications
AI Translation
- N-channel enhancement-mode MOSFET
- Switching applications
In-Stock: 6,350
6,350 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 50+ | $ 0.0194 | $ 0.97 |
| 500+ | $ 0.015 | $ 7.50 |
| 3,000+ | $ 0.0126 | $ 37.80 |
| 6,000+ | $ 0.0112 | $ 67.20 |
| 24,000+ | $ 0.0099 | $ 237.60 |
| 51,000+ | $ 0.0092 | $ 469.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-323 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Output Capacitance(Coss) | 7.3pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 250mW | |
| RDS(on) | 1.45Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 47.2pF | |
| Gate Charge(Qg) | 440pC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low on-resistance
- ESD-protected gate, up to 2kV HBM
- High-speed switching
- Simple gate drive circuitry
- Easy to use in parallel
Applications
AI Translation
- N-channel enhancement-mode MOSFET
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



