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HUASHUO FDN338P product image
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HUASHUO FDN338PRoHS

Manufacturer
HUASHUOAsian Brands
MPN
FDN338P
LCSC Part #
C518789
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 3A SOT-23
Datasheetpdf iconHUASHUO FDN338P
In-Stock: 26,720
26,720 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0488$ 0.49
100+$ 0.0391$ 3.91
300+$ 0.0343$ 10.29
3,000+$ 0.0288$ 86.40
6,000+$ 0.0259$ 155.40
9,000+$ 0.0244$ 219.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingSOT-23
Drain to Source Voltage20V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))300mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)73pF
RDS(on)130mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)677pF
Gate Charge(Qg)10.1nC@4.5V
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The FDN338P is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FDN338P meet the RoHS and Green Product requirement with full function reliability approved.

Features

AI Translation
  • Super Low Gate Charge
  • Excellent Cdv/dt effect decline
  • Advanced high cell density Trench technology