HUASHUO IRLML5203
| Manufacturer | HUASHUOAsian Brands |
| MPN | IRLML5203 |
| LCSC Part # | C518778 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 3.2A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.32W | |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | |
| RDS(on) | 43mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 7.3nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRLML5203 is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The IRLML5203 meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
In-Stock: 220
220 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0268 | $ 0.27 |
| 100+ | $ 0.0261 | $ 2.61 |
| 300+ | $ 0.0257 | $ 7.71 |
| 1,000+ | $ 0.0253 | $ 25.30 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.32W | |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | |
| RDS(on) | 43mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 7.3nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRLML5203 is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The IRLML5203 meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



