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HL(Haolin Elec) HU4N65RoHS

Produttore
HL(Haolin Elec)Asian Brands
Cod. Prod.
HU4N65
Cod. LCSC
C5187656
Imballo
TO-251
Numero Cliente
Attr. chiave
650V 4A 2.5V 2.5W 2.3Ω@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS
Scheda Tecnicapdf iconHL(Haolin Elec) HU4N65
Non disponibile al momento
Minimo: 5Multiplo: 5Unità di vendita: Piece

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreHL(Haolin Elec)
ImballoTO-251
Drain to Source Voltage650V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)4A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)10.5pF
RDS(on)2.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)680pF
Gate Charge(Qg)13.5nC@10V
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Descrizione

Traduzione AI

AGM402D combines advanced trench MOSFET technology with low-resistance packaging to deliver extremely low drain-to-source on-resistance. The device is ideal for load switch and battery protection applications.

Caratteristiche

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  • Innovative design
  • Superior avalanche ruggedness technology
  • Robust gate oxide technology
  • Ultra-low intrinsic capacitance
  • Excellent switching characteristics
  • Unmatched gate charge: 10.5 nC (typical)
  • Extended safe operating area
  • Lower RDS(ON): 2.3 Ω (typical) @ VGS = 10V
  • 100% avalanche tested

Applicazioni

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  • Motherboard/GPU core voltage
  • Secondary synchronous rectifier for switching power supplies
  • Point-of-load applications
  • Brushless DC motor driver