JSMSEMI AO4803A
| Manufacturer | JSMSEMIAsian Brands |
| MPN | AO4803A |
| LCSC Part # | C5183839 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH ARR 30V 5.1A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 55mΩ@10V | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 520pF | |
| Gate Charge(Qg) | 11nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This dual P-channel MOSFET employs advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -30 V, ID = -5.1 A, RDS(ON) < 55 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell-density trench technology for ultra-low RDS(ON)
- High-quality package with excellent thermal performance
Applications
AI Translation
- Mobile phones & accessories - Personal digital assistants - Portable instruments - Load switches
In-Stock: 1,435
1,435 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1134$ 0.0908 | $ 0.45 |
| 50+ | $ 0.0896$ 0.0717 | $ 3.59 |
| 150+ | $ 0.0778$ 0.0623 | $ 9.35 |
| 500+ | $ 0.0689$ 0.0552 | $ 27.60 |
| 3,000+ | $ 0.0617$ 0.0494 | $ 148.20 |
| 6,000+ | $ 0.0582$ 0.0466 | $ 279.60 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 55mΩ@10V | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 520pF | |
| Gate Charge(Qg) | 11nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This dual P-channel MOSFET employs advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -30 V, ID = -5.1 A, RDS(ON) < 55 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell-density trench technology for ultra-low RDS(ON)
- High-quality package with excellent thermal performance
Applications
AI Translation
- Mobile phones & accessories - Personal digital assistants - Portable instruments - Load switches
C5183839 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



