TOSHIBA T2N7002AK,LM
| Manufacturer | |
| MPN | T2N7002AK,LM |
| LCSC Part # | C516175 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 200mA SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 320mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 700fF | |
| RDS(on) | 3.9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17pF | |
| Gate Charge(Qg) | 350pC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- High Speed Switching Applications
- ESD protected gate
- Low ON-resistance RDS(on)=2.8 Ω (typ.) (@VGS=10 V)
- RDS(on)=3.1 Ω (typ.) (@VGS=5 V)
- RDS(on)=3.2 Ω (typ.) (@VGS=4.5 V)
Applications
AI Translation
- High-speed switching applications
In-Stock: 18,260
18,260 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0413 | $ 0.41 |
| 100+ | $ 0.0331 | $ 3.31 |
| 300+ | $ 0.029 | $ 8.70 |
| 3,000+ | $ 0.0259 | $ 77.70 |
| 6,000+ | $ 0.0234 | $ 140.40 |
| 9,000+ | $ 0.0221 | $ 198.90 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 320mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 700fF | |
| RDS(on) | 3.9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17pF | |
| Gate Charge(Qg) | 350pC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- High Speed Switching Applications
- ESD protected gate
- Low ON-resistance RDS(on)=2.8 Ω (typ.) (@VGS=10 V)
- RDS(on)=3.1 Ω (typ.) (@VGS=5 V)
- RDS(on)=3.2 Ω (typ.) (@VGS=4.5 V)
Applications
AI Translation
- High-speed switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



