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TOSHIBA SSM6J214FE(TE85L,F product image
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TOSHIBA SSM6J214FE(TE85L,FRoHS

Manufacturer
TOSHIBA
MPN
SSM6J214FE(TE85L,F
LCSC Part #
C516172
Packaging
SOT-563(SOT-666)
Customer #
Key Attributes
MOSFET P-CH 30V 3.6A SOT-563(SOT-666)
Datasheetpdf iconTOSHIBA SSM6J214FE(TE85L,F
In-Stock: 12,285
12,285 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.1768$ 0.88
50+$ 0.1559$ 7.80
150+$ 0.1469$ 22.04
500+$ 0.1357$ 67.85
2,500+$ 0.1307$ 326.75
4,000+$ 0.1277$ 510.80
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTOSHIBA
PackagingSOT-563(SOT-666)
Drain to Source Voltage30V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)3.6A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)50mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)560pF
Gate Charge(Qg)7.9nC@4.5V
TypeP-Channel
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Features

AI Translation
  • 1.8 V drive
  • Low on-resistance: RDS(ON) = 149.6 mΩ (max) (@ VGS = −1.8 V)
  • RDS(ON) = 77.6 m Ω (\max) \left(@ VGS = - 2.5 V\right)
  • RDS(ON) = 57.0 m Ω (\max) \left(@ VGS = - 4.5 V\right)
  • RDS(ON) = 50.0 m Ω (\max) (@VGS = - 10 V)

Applications

AI Translation
  • Power management switching applications