DIODES DMN2028USS-13
| Manufacturer | |
| MPN | DMN2028USS-13 |
| LCSC Part # | C5157769 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 9.8A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 12.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF | |
| RDS(on) | 20mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 11.6nC |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low output leakage
- ESD protection up to 2kV
- Fully lead-free and fully RoHS compliant
- Halogen and antimony free, "Green" device
- AEC-Q101 high reliability qualified
Applications
AI Translation
- Battery charging
- Power management functions
- DC-DC converters
- Portable power adapters
In-Stock: 1,771
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.499 | $ 0.50 |
| 10+ | $ 0.396 | $ 3.96 |
| 30+ | $ 0.3525 | $ 10.58 |
| 100+ | $ 0.2978 | $ 29.78 |
| 500+ | $ 0.2737 | $ 136.85 |
| 1,000+ | $ 0.2576 | $ 257.60 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 12.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF | |
| RDS(on) | 20mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 11.6nC |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low output leakage
- ESD protection up to 2kV
- Fully lead-free and fully RoHS compliant
- Halogen and antimony free, "Green" device
- AEC-Q101 high reliability qualified
Applications
AI Translation
- Battery charging
- Power management functions
- DC-DC converters
- Portable power adapters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



