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DIODES DMG4800LFG-7 product image
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DIODES DMG4800LFG-7RoHS

Manufacturer
DIODES
MPN
DMG4800LFG-7
LCSC Part #
C5157766
Packaging
UDFN3030-8
Customer #
Key Attributes
MOSFET N-CH 30V 7.44A UDFN3030-8
Datasheetpdf iconDIODES DMG4800LFG-7
In-Stock: 105
105 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.2447$ 0.24
10+$ 0.2399$ 2.40
30+$ 0.2367$ 7.10
100+$ 0.2334$ 23.34
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingUDFN3030-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)7.44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation940mW
Reverse Transfer Capacitance (Crss@Vds)122pF
RDS(on)24mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)798pF
Gate Charge(Qg)9.47nC@5V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

D3R6N30 is an N-channel enhancement-mode MOSFET. Advanced technology and cell structure give this product low on-resistance, excellent switching performance, and high avalanche breakdown voltage. It is well-suited for power management applications in UPS and inverter systems.

Features

AI Translation
  • Low On-Resistance
  • Low Input Capacitance Fast Switching Speed
  • Low Input/Output Leakage
  • Lead Free By Design/RoHS Compliant
  • "Green" Device
  • Qualified to AEC-Q101 Standards for High Reliability