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VISHAY IRFBE30PBFRoHS

Manufacturer
VISHAY
MPN
IRFBE30PBF
LCSC Part #
C5148531
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 800V 4.1A TO-220AB
Datasheetpdf iconVISHAY IRFBE30PBF
In-Stock: 2,992
2,992 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.2589$ 1.26
10+$ 1.0543$ 10.54
50+$ 0.8463$ 42.32
100+$ 0.7196$ 71.96
500+$ 0.6628$ 331.40
1,000+$ 0.6384$ 638.40
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingTO-220AB
Drain to Source Voltage800V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)78nC@10V
TypeN-Channel
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Introduction

AI Translation

Third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • N-channel MOSFET