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VBsemi Elec IRLR7843TRPBF&-2-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRLR7843TRPBF&-2-VB |
| LCSC Part # | C5137453 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 120A TO-252 |
| Datasheet |  VBsemi Elec IRLR7843TRPBF&-2-VB |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 120A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| RDS(on) | 2.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.201nF | |
| Gate Charge(Qg) | 82nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- TrenchFET Power MOSFET 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2011/65/EU
Applications
AI Translation
- OR-ing
- Server
- DC/DC
In-Stock: 44
44 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0199 | $ 1.02 |
| 10+ | $ 0.8283 | $ 8.28 |
| 30+ | $ 0.7333 | $ 22.00 |
| 100+ | $ 0.6367 | $ 63.67 |
| 500+ | $ 0.5387 | $ 269.35 |
| 1,000+ | $ 0.5085 | $ 508.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 120A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| RDS(on) | 2.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.201nF | |
| Gate Charge(Qg) | 82nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- TrenchFET Power MOSFET 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2011/65/EU
Applications
AI Translation
- OR-ing
- Server
- DC/DC
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |