CBI 2N7002
| Manufacturer | CBIAsian Brands |
| MPN | 2N7002 |
| LCSC Part # | C51315010 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 200mW 60V 115mA 1V 7.5Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | CBI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 25pF | |
| Pd - Power Dissipation | 200mW | |
| Drain to Source Voltage | 60V | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 115mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- High-density cell design for low on-resistance RDS(ON)
- Voltage-controlled small-signal switching
- High saturation current capability
- High-speed switching
In-Stock: 2,950
2,950 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 50+ | $ 0.0071 | $ 0.36 |
| 500+ | $ 0.0069 | $ 3.45 |
| 3,000+ | $ 0.0068 | $ 20.40 |
| 6,000+ | $ 0.0067 | $ 40.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | CBI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 25pF | |
| Pd - Power Dissipation | 200mW | |
| Drain to Source Voltage | 60V | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 115mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- High-density cell design for low on-resistance RDS(ON)
- Voltage-controlled small-signal switching
- High saturation current capability
- High-speed switching
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



