onsemi NTMD4N03R2G
| Manufacturer | |
| MPN | NTMD4N03R2G |
| LCSC Part # | C513049 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 4A SOIC-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 4A | |
| RDS(on) | 48mΩ@10V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 95pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 4A | |
| RDS(on) | 48mΩ@10V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 95pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Designed for use in low voltage, high speed switching applications
- Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life - RDS(on)=0.048 Ω, VGS=10 V (Typ) - RDS(on)=0.065 Ω, VGS=4.5 V (Typ)
- Miniature SO−8 Surface Mount Package - Saves Board Space
- Diode is Characterized for Use in Bridge Circuits
- Diode Exhibits High Speed, with Soft Recovery
- NVMD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free and are RoHS Compliant
Applications
AI Translation
- DC−DC Converters
- Computers
- Printers
- Cellular and Cordless Phones
- Disk Drives and Tape Drives
Out of Stock
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.8416 | $ 0.84 |
| 10+ | $ 0.7263 | $ 7.26 |
| 30+ | $ 0.6694 | $ 20.08 |
| 100+ | $ 0.6125 | $ 61.25 |
| 500+ | $ 0.5654 | $ 282.70 |
| 1,000+ | $ 0.5475 | $ 547.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 4A | |
| RDS(on) | 48mΩ@10V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 95pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 4A | |
| RDS(on) | 48mΩ@10V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 95pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Designed for use in low voltage, high speed switching applications
- Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life - RDS(on)=0.048 Ω, VGS=10 V (Typ) - RDS(on)=0.065 Ω, VGS=4.5 V (Typ)
- Miniature SO−8 Surface Mount Package - Saves Board Space
- Diode is Characterized for Use in Bridge Circuits
- Diode Exhibits High Speed, with Soft Recovery
- NVMD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free and are RoHS Compliant
Applications
AI Translation
- DC−DC Converters
- Computers
- Printers
- Cellular and Cordless Phones
- Disk Drives and Tape Drives
C513049 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



