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onsemi FDS86240RoHS

Manufacturer
onsemi
MPN
FDS86240
LCSC Part #
C512900
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 150V 7.5A SO-8
Datasheetpdf icononsemi FDS86240
In-Stock: 221
221 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.9899$ 1.2736$ 1.27
10+$ 1.9465$ 1.2458$ 12.46
30+$ 1.9186$ 1.2279$ 36.84
100+$ 1.8891$ 1.2091$ 120.91
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Drain to Source Voltage150V
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W;5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)19.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.57nF
Gate Charge(Qg)40nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.

Features

AI Translation
  • Shielded Gate MOSFET Technology
  • Max rDS(on)=19.8 mΩ at VGS=10 V, ID=7.5 A
  • Max rDS(on)=26 mΩ at VGS=6 V, ID=6.4 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • 100% UIL Tested
  • RoHS Compliant

Applications

AI Translation
  • DC/DC Converters and Off-Line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24 V and 48 V Systems
  • High Voltage Synchronous Rectifier