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onsemi FDMC8010
| Manufacturer | |
| MPN | FDMC8010 |
| LCSC Part # | C512897 |
| Packaging | PQFN-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 75A PQFN-8 |
| Datasheet |  onsemi FDMC8010 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 54W | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.86nF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
Features
AI Translation
- Max rDS(on)=1.3 mΩ at VGS=10 V, ID=30 A
- Max rDS(on)=1.8 mΩ at VGS=4.5 Vz, ID=25 A
- High Performance Technology for Extremely Low rDS(on)
- These Devices are Pb−Free and are RoHS Compliant
Applications
AI Translation
- DC − DC Buck Converters
- Point of Load
- High Efficiency Load Switch and Low Side Switching
- Oring FET
In-Stock: 197
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0564 | $ 1.06 |
| 10+ | $ 0.8617 | $ 8.62 |
| 30+ | $ 0.7643 | $ 22.93 |
| 100+ | $ 0.667 | $ 66.70 |
| 500+ | $ 0.6085 | $ 304.25 |
| 1,000+ | $ 0.5793 | $ 579.30 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 54W | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.86nF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
Features
AI Translation
- Max rDS(on)=1.3 mΩ at VGS=10 V, ID=30 A
- Max rDS(on)=1.8 mΩ at VGS=4.5 Vz, ID=25 A
- High Performance Technology for Extremely Low rDS(on)
- These Devices are Pb−Free and are RoHS Compliant
Applications
AI Translation
- DC − DC Buck Converters
- Point of Load
- High Efficiency Load Switch and Low Side Switching
- Oring FET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |