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HUASHUO AO3416 product image
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HUASHUO AO3416RoHS

Manufacturer
HUASHUOAsian Brands
MPN
AO3416
LCSC Part #
C5128190
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 20V 6A SOT-23
Datasheetpdf iconHUASHUO AO3416
In-Stock: 50
50 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0607$ 0.61
100+$ 0.0482$ 4.82
300+$ 0.042$ 12.60
3,000+$ 0.0363$ 108.90
6,000+$ 0.0325$ 195.00
9,000+$ 0.0306$ 275.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingSOT-23
Drain to Source Voltage20V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation720mW
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)15mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)10.6nC@4.5V
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The AO3416 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The AO3416 meet the RoHS and Green Product requirement with full function reliability approved.

Features

AI Translation
  • Super Low Gate Charge
  • Excellent Cdv/dt effect decline
  • Advanced high cell density Trench technology ESD Protected 2KV

Applications

AI Translation
  • MB/VGA core voltage
  • Secondary synchronous rectifier for switching power supplies
  • Point-of-load applications
  • Brushless DC motor driver