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MICROCHIP MSC080SMA120BRoHS

Manufacturer
MICROCHIP
MPN
MSC080SMA120B
LCSC Part #
C5127757
Packaging
TO-247
Customer #
Key Attributes
SiC N-Channel Power MOSFET
Datasheetpdf iconMICROCHIP MSC080SMA120B
In-Stock: 6
6 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 21.1319$ 21.13
10+$ 20.188$ 201.88
30+$ 18.5539$ 556.62
90+$ 17.1282$ 1541.54
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMICROCHIP
PackagingTO-247
Drain to Source Voltage1.2kV
Output Capacitance(Coss)91pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation231W
RDS(on)100mΩ
Reverse Transfer Capacitance (Crss@Vds)6.2pF
Number1 N-channel
Input Capacitance(Ciss)1.1nF
Gate Charge(Qg)72nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

The silicon carbide (SiC) power MOSFET product line increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120B device is a 1200 V, 80 mΩ SiC MOSFET in a TO-247 package.

Features

AI Translation
  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, T_J(max)=175 ℃
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS compliant

Applications

AI Translation
  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution