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AWINIC(Shanghai Awinic Tech) AW15208LFDR product image
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AWINIC(Shanghai Awinic Tech) AW15208LFDRRoHS

Manufacturer
AWINIC(Shanghai Awinic Tech)Asian Brands
MPN
AW15208LFDR
LCSC Part #
C5125900
Packaging
FCDFN-6L(0.7x1.1)
Customer #
Key Attributes
Low Noise Amplifier with Bypass Switch for LTE Low Band
Datasheetpdf iconAWINIC(Shanghai Awinic Tech) AW15208LFDR
In-Stock: 1,935
1,935 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.0765$ 0.38
50+$ 0.0601$ 3.01
150+$ 0.0519$ 7.79
500+$ 0.0457$ 22.85
3,000+$ 0.0388$ 116.40
6,000+$ 0.0363$ 217.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryRF and Wireless/RF Amplifiers
ManufacturerAWINIC(Shanghai Awinic Tech)
PackagingFCDFN-6L(0.7x1.1)
Frequency Range703MHz~960MHz
Input Return Loss10dB
Operating Temperature-40℃~+85℃
Gain13.5dB
Voltage - Supply1.5V~3.3V
Output Return Loss10dB
Noise Figure0.6dB
FeaturesBypass mode;Input matching integration;Output matching integration
IP312dBm
P1dB-1dBm
Current - Supply9mA
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

A Low Noise Amplifier with bypass designed for LTE receiver applications. Requires only one external input matching inductor, reduces assembly complexity and the PCB area, enabling a cost-effective solution. Achieves low noise figure, high linearity, high gain, over a wide range of supply voltages from 1.5V up to 3.3V. Improves sensitivity with low noise figure and high gain, provides better immunity against jammer signals with high linearity, reduces filtering requirement of preceding stage and hence reduces the overall cost. Available in a small lead-free, RoHS-Compliant, FCDFN 1.1mmX0.7mmX0.37 mm -6L package.

Features

AI Translation
  • Operating frequency 703MHz to 960MHz
  • Noise figure (NF) = 0.6dB
  • High power gain = 13.5dB
  • Insertion Loss in bypass mode = 3dB
  • Gain mode IIP3ib = +7dBm
  • Gain mode input 1dB-compression point = -1.0dBm Bypass mode input 1dB-compression point = +5.0dBm
  • Supply voltage: 1.5V to 3.3V
  • Gain mode current 9mA
  • Bypass mode current <1uA
  • Input and output DC decoupled
  • Requires only one input matching inductor
  • Integrated matching for the output
  • FCDFN 1.1mmX0.7mmX0.37mm -6L package 2kV HBM ESD protection (including RFIN and RFOUT pin)

Applications

AI Translation
  • Cell phones
  • Tablets
  • Other RF front-end modules