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DIODES DMN10H170SFDE-7RoHS

Manufacturer
DIODES
MPN
DMN10H170SFDE-7
LCSC Part #
C5125498
Packaging
UDFN2020-6
Customer #
Key Attributes
MOSFET N-CH 100V 2.9A UDFN2020-6
Datasheetpdf iconDIODES DMN10H170SFDE-7
In-Stock: 386
386 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.2176$ 0.22
10+$ 0.2131$ 2.13
30+$ 0.2101$ 6.30
100+$ 0.2071$ 20.71
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingUDFN2020-6
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation660mW
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.167nF
Gate Charge(Qg)4.9nC@4.5V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • 0.6mm Profile – Ideal for Low Profile Applications
  • PCB Footprint of 4mm²
  • Low On-Resistance
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Applications

AI Translation
  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.