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TECH PUBLIC FDC6561ANRoHS

Manufacturer
TECH PUBLICAsian Brands
MPN
FDC6561AN
LCSC Part #
C5123911
Packaging
SOT-23-6
Customer #
Key Attributes
30V Dual N-Channel Enhancement Mode MOSFET
Datasheetpdf iconTECH PUBLIC FDC6561AN
In-Stock: 3,110
3,110 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1289$ 0.64
50+$ 0.1119$ 5.60
150+$ 0.1046$ 15.69
500+$ 0.0955$ 47.75
3,000+$ 0.0876$ 262.80
6,000+$ 0.0852$ 511.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTECH PUBLIC
PackagingSOT-23-6
Drain to Source Voltage30V
Current - Continuous Drain(Id)4A
Output Capacitance(Coss)35pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
RDS(on)35mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)23pF
Number2 N-Channel
Input Capacitance(Ciss)170pF
Gate Charge(Qg)4nC@10V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • Drain-Source Voltage (VDS) = 30V, Drain Current (ID) = 4A
  • RDS(ON) < 75mΩ at VGS = 4.5V
  • RDS(ON) < 45mΩ at VGS = 10V

Applications

AI Translation
  • Notebook computers
  • Load switches
  • Network equipment
  • Handheld instruments