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onsemi FGH75T65SHD-F155RoHS

Manufacturer
MPN
FGH75T65SHD-F155
LCSC Part #
C511966
Packaging
TO-247-G03
Customer #
Key Attributes
IGBT 650V 150A TO-247-G03
Datasheetpdf icononsemi FGH75T65SHD-F155

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufactureronsemi
PackagingTO-247-G03
Td(off)80ns
Pd - Power Dissipation455W
Td(on)28ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)43pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@75mA
Vce Saturation(VCE(sat))2.1V@75A,15V
Reverse Recovery Time(trr)43.4ns
Switching Energy(Eoff)720uJ
Turn-On Energy (Eon)2.4mJ
Input Capacitance(Cies)3.68nF
Output Capacitance(Coes)179pF
Gate Charge(Qg)123nC

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Using novel field stop IGBT technology, new series of field stop 3 generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

AI Translation
  • Maximum Junction Temperature: T_J = 175℃
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: V_CE(sat) = 1.6V (Typ.) ≥ I_C = 75A
  • 100% of the Parts Tested for I_LM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant

Applications

AI Translation
  • Solar Inverter, UPS, Welder, Telecom, ESS, PFC
In-Stock: 3
3 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 4.5135$ 4.51
10+$ 4.0301$ 40.30
30+$ 3.7413$ 112.24
90+$ 3.451$ 310.59
450+$ 3.3154$ 1491.93
900+$ 3.2547$ 2929.23
Standard Packaging30/Full Tube
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