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HUASHUO HSCE3031 product image
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HUASHUO HSCE3031RoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSCE3031
LCSC Part #
C51025845
Packaging
DFN-8(3.3x3.3)
Customer #
Key Attributes
MOSFET P-CH 30V 50A DFN-8(3.3x3.3)
Datasheetpdf iconHUASHUO HSCE3031
In-Stock: 2,685
2,685 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3371$ 1.69
50+$ 0.267$ 13.35
150+$ 0.237$ 35.55
500+$ 0.1995$ 99.75
3,000+$ 0.1828$ 548.40
6,000+$ 0.1728$ 1036.80
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingDFN-8(3.3x3.3)
Drain to Source Voltage30V
Output Capacitance(Coss)255pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)5.2mΩ@10V;7mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.45nF
Gate Charge(Qg)60nC@10V
TypeP-Channel
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Introduction

AI Translation

HSCE3031 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. The HSCE3031 is RoHS and green product compliant, 100% guaranteed avalanche-rated (EAS), and has passed full function reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • 100% guaranteed avalanche capability (EAS)
  • Green/RoHS-compliant devices available
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology