HUASHUO HSM4407
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSM4407 |
| LCSC Part # | C508781 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 11.5A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 11.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 237pF | |
| RDS(on) | 16mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.215nF | |
| Gate Charge(Qg) | 20nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
HSM4407 is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSM4407 complies with RoHS and green product requirements, is 100% guaranteed for EAS (avalanche energy rating), and has passed full-function reliability qualification.
Features
AI Translation
- 100% guaranteed EAS (Avalanche Energy Rating)
- Green/RoHS-compliant devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
In-Stock: 1,150
1,150 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0732 | $ 0.73 |
| 100+ | $ 0.0579 | $ 5.79 |
| 300+ | $ 0.0502 | $ 15.06 |
| 1,000+ | $ 0.0445 | $ 44.50 |
| 4,000+ | $ 0.0399 | $ 159.60 |
| 8,000+ | $ 0.0375 | $ 300.00 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 11.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 237pF | |
| RDS(on) | 16mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.215nF | |
| Gate Charge(Qg) | 20nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
HSM4407 is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSM4407 complies with RoHS and green product requirements, is 100% guaranteed for EAS (avalanche energy rating), and has passed full-function reliability qualification.
Features
AI Translation
- 100% guaranteed EAS (Avalanche Energy Rating)
- Green/RoHS-compliant devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C508781 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



