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onsemi FGH60N60SMD product image
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onsemi FGH60N60SMDRoHS

Manufacturer
onsemi
MPN
FGH60N60SMD
LCSC Part #
C50649
Packaging
TO-247
Customer #
Key Attributes
IGBT 600V 120A TO-247
Datasheetpdf icononsemi FGH60N60SMD

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufactureronsemi
PackagingTO-247
Td(off)104ns
Pd - Power Dissipation600W
Td(on)18ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)120A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)85pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.5V@250uA
Vce Saturation(VCE(sat))2.5V@60A,15V
Reverse Recovery Time(trr)39ns
Switching Energy(Eoff)450uJ
Turn-On Energy (Eon)1.26mJ
Input Capacitance(Cies)2.915nF
Output Capacitance(Coes)270pF
Gate Charge(Qg)189nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Using novel field stop IGBT technology, new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

AI Translation
  • Maximum Junction Temperature: T_J = 175℃
  • Positive Temperaure Co-efficient for easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: V_CE(sat) = 1.9 V(Typ.) @ I_C = 60 A
  • High Input Impedance
  • Fast Switching: E_OFF = 7.5 uJ/A
  • Tightened Parameter Distribution
  • RoHS Compliant

Applications

AI Translation
  • Solar Inverter, UPS, Welder, PFC, Telecom, ESS
In-Stock: 13,261
13,261 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 3.1807$ 3.18
10+$ 2.6557$ 26.56
30+$ 2.3446$ 70.34
90+$ 2.0303$ 182.73
450+$ 1.8845$ 848.03
900+$ 1.818$ 1636.20
Standard Packaging30/Full Tube
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