WILLSEMI WNM2046C-3/TR
| Manufacturer | WILLSEMIAsian Brands |
| MPN | WNM2046C-3/TR |
| LCSC Part # | C506106 |
| Packaging | DFN1006-3L |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 0.6A DFN1006-3L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN1006-3L | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 600mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 420mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | 1.07nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046C is Pb-free.
Features
AI Translation
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- Small package DFN1006-3L
Applications
AI Translation
- DC/DC converters
- Power supply converters circuit
- Load/Power Switching for portable device
In-Stock: 9,600
9,600 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0874 | $ 0.87 |
| 100+ | $ 0.073 | $ 7.30 |
| 300+ | $ 0.0658 | $ 19.74 |
| 1,000+ | $ 0.0604 | $ 60.40 |
| 5,000+ | $ 0.0561 | $ 280.50 |
| 10,000+ | $ 0.0539 | $ 539.00 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN1006-3L | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 600mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 420mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | 1.07nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046C is Pb-free.
Features
AI Translation
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- Small package DFN1006-3L
Applications
AI Translation
- DC/DC converters
- Power supply converters circuit
- Load/Power Switching for portable device
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
