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WILLSEMI WNM2046C-3/TR product image
  • WNM2046C-3/TR thumbnail 1
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  • Pinout Diagram
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WILLSEMI WNM2046C-3/TRRoHS

Manufacturer
WILLSEMIAsian Brands
MPN
WNM2046C-3/TR
LCSC Part #
C506106
Packaging
DFN1006-3L
Customer #
Key Attributes
MOSFET N-CH 20V 0.6A DFN1006-3L
Datasheetpdf iconWILLSEMI WNM2046C-3/TR
In-Stock: 9,600
9,600 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0874$ 0.87
100+$ 0.073$ 7.30
300+$ 0.0658$ 19.74
1,000+$ 0.0604$ 60.40
5,000+$ 0.0561$ 280.50
10,000+$ 0.0539$ 539.00
Standard Packaging10000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerWILLSEMI
PackagingDFN1006-3L
Drain to Source Voltage20V
Current - Continuous Drain(Id)600mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))450mV
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)420mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)30pF
Gate Charge(Qg)1.07nC@4.5V

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging10000
Sales UnitPiece

Introduction

AI Translation

The WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046C is Pb-free.

Features

AI Translation
  • Trench Technology
  • Supper high density cell design
  • Excellent ON resistance
  • Extremely Low Threshold Voltage
  • Small package DFN1006-3L

Applications

AI Translation
  • DC/DC converters
  • Power supply converters circuit
  • Load/Power Switching for portable device