WILLSEMI WPM2065-6/TR
| Manufacturer | WILLSEMIAsian Brands |
| MPN | WPM2065-6/TR |
| LCSC Part # | C506095 |
| Packaging | DFN-6L(2x2) |
| Customer # | |
| Key Attributes | 20V 6.9A 450mV 1.7W 17mΩ@4.5V 1 P-Channel DFN-6L(2x2) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN-6L(2x2) | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.9A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 201pF | |
| RDS(on) | 17mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.026nF | |
| Gate Charge(Qg) | 23nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
WPM2065 is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product WPM2065 is lead-free and halogen-free.
Features
AI Translation
- Trench technology
- Ultra-high density cell design
- Excellent on-resistance for higher DC current
- Ultra-low threshold voltage
- HBM ESD protection > 4kV
- Small DFN2X2-6L package
Applications
AI Translation
- Driver for relays, solenoids, motors, LEDs, etc.
- DC-DC converter circuits
- Power switches
- Load switches
- Charging
Out of Stock
Notify Me
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.2609 | $ 0.26 |
| 200+ | $ 0.101 | $ 20.20 |
| 500+ | $ 0.0975 | $ 48.75 |
| 1,000+ | $ 0.0957 | $ 95.70 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN-6L(2x2) | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.9A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 201pF | |
| RDS(on) | 17mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.026nF | |
| Gate Charge(Qg) | 23nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
WPM2065 is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product WPM2065 is lead-free and halogen-free.
Features
AI Translation
- Trench technology
- Ultra-high density cell design
- Excellent on-resistance for higher DC current
- Ultra-low threshold voltage
- HBM ESD protection > 4kV
- Small DFN2X2-6L package
Applications
AI Translation
- Driver for relays, solenoids, motors, LEDs, etc.
- DC-DC converter circuits
- Power switches
- Load switches
- Charging
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

