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JSCJ CJCD2003 product image
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JSCJ CJCD2003RoHS

Manufacturer
JSCJAsian Brands
MPN
CJCD2003
LCSC Part #
C504180
Packaging
DFNWB-6-EP(3x2)
Customer #
Key Attributes
18V 10A 8.2mΩ@2.5V 1 N-channel DFNWB-6-EP(3x2) Single FETs, MOSFETs RoHS
Datasheetpdf iconJSCJ CJCD2003
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.259$ 1.30
50+$ 0.2077$ 10.39
150+$ 0.1857$ 27.86
500+$ 0.1583$ 79.15
3,000+$ 0.1461$ 438.30
6,000+$ 0.1387$ 832.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSCJ
PackagingDFNWB-6-EP(3x2)
Configuration-
Drain to Source Voltage18V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV;1V;4.5V;6.2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)8.2mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)1.95nF
Gate Charge(Qg)17nC

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

CJCD2003 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON) and low gate charge. It features ESD protection and is configured in a common-drain topology, suitable for use as a unidirectional or bidirectional load switch.