JSCJ CJCD2003
| Manufacturer | JSCJAsian Brands |
| MPN | CJCD2003 |
| LCSC Part # | C504180 |
| Packaging | DFNWB-6-EP(3x2) |
| Customer # | |
| Key Attributes | 18V 10A 8.2mΩ@2.5V 1 N-channel DFNWB-6-EP(3x2) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | DFNWB-6-EP(3x2) | |
| Configuration | - | |
| Drain to Source Voltage | 18V | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 400mV;1V;4.5V;6.2V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF | |
| RDS(on) | 8.2mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.95nF | |
| Gate Charge(Qg) | 17nC |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
CJCD2003 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON) and low gate charge. It features ESD protection and is configured in a common-drain topology, suitable for use as a unidirectional or bidirectional load switch.
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 5+ | $ 0.259 | $ 1.30 |
| 50+ | $ 0.2077 | $ 10.39 |
| 150+ | $ 0.1857 | $ 27.86 |
| 500+ | $ 0.1583 | $ 79.15 |
| 3,000+ | $ 0.1461 | $ 438.30 |
| 6,000+ | $ 0.1387 | $ 832.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | DFNWB-6-EP(3x2) | |
| Configuration | - | |
| Drain to Source Voltage | 18V | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 400mV;1V;4.5V;6.2V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF | |
| RDS(on) | 8.2mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.95nF | |
| Gate Charge(Qg) | 17nC |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
CJCD2003 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON) and low gate charge. It features ESD protection and is configured in a common-drain topology, suitable for use as a unidirectional or bidirectional load switch.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



