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DOINGTER IRF7328-DO
| Manufacturer | DOINGTERAsian Brands |
| MPN | IRF7328-DO |
| LCSC Part # | C50386329 |
| Packaging | SOP-8D |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 8A SOP-8D |
| Datasheet |  DOINGTER IRF7328-DO |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | SOP-8D | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 204pF | |
| Current - Continuous Drain(Id) | 8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.65V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 154pF | |
| RDS(on) | 13mΩ@10V;18mΩ@4.5V | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 1.229nF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This dual P-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = -30 V, drain current (ID) = -8 A, RDS(ON) < 16 mΩ at VGS = 10 V (typical: 13 mΩ)
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation
In-Stock: 2,980
2,980 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1161 | $ 0.58 |
| 50+ | $ 0.0924 | $ 4.62 |
| 150+ | $ 0.0806 | $ 12.09 |
| 500+ | $ 0.0718 | $ 35.90 |
| 3,000+ | $ 0.0647 | $ 194.10 |
| 6,000+ | $ 0.0612 | $ 367.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | SOP-8D | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 204pF | |
| Current - Continuous Drain(Id) | 8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.65V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 154pF | |
| RDS(on) | 13mΩ@10V;18mΩ@4.5V | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 1.229nF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This dual P-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = -30 V, drain current (ID) = -8 A, RDS(ON) < 16 mΩ at VGS = 10 V (typical: 13 mΩ)
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |