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Infineon BAT1704WH6327XTSA1 product image
  • BAT1704WH6327XTSA1 thumbnail 1
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Infineon BAT1704WH6327XTSA1RoHS

Manufacturer
Infineon
MPN
BAT1704WH6327XTSA1
LCSC Part #
C503474
Packaging
SOT-323-3
Customer #
Key Attributes
DIODE ARR SCHOTTKY 4V SOT-323-3
Datasheetpdf iconInfineon BAT1704WH6327XTSA1

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/RF Diodes
ManufacturerInfineon
PackagingSOT-323-3
Current - Rectified130mA
Diode Configuration1 Pair Series Connection
Reverse Leakage Current (Ir)250nA@3V
Voltage - Forward(Vf@If)600mV@10mA
DC Reverse Voltage(Vr)4V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.

Features

AI Translation
  • Low inductance Ls = 1.4 nH (typical)
  • Low capacitance C = 0.61 pF (typical) at frequency f = 1 MHz
  • Industry standard SOT323-3 package (2.1 mm × 2 mm × 0.9 mm)
  • Pb-free, RoHS compliant and halogen free

Applications

AI Translation
  • Wearables
  • Smart metering
  • Telematic systems
  • Set top boxes
In-Stock: 1,360
1,360 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.114$ 0.57
50+$ 0.1112$ 5.56
150+$ 0.1093$ 16.40
500+$ 0.1074$ 53.70
Standard Packaging3000/Full Reel
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