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NCE NCE0208KARoHS

Manufacturer
NCEAsian Brands
MPN
NCE0208KA
LCSC Part #
C502830
Packaging
TO-252-2L
Customer #
Key Attributes
MOSFET N-CH 200V TO-252-2L
Datasheetpdf iconNCE NCE0208KA
In-Stock: 4,900
4,900 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.5037$ 2.52
50+$ 0.3883$ 19.42
150+$ 0.338$ 50.70
500+$ 0.2762$ 138.10
2,500+$ 0.2486$ 621.50
5,000+$ 0.2307$ 1153.50
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNCE
PackagingTO-252-2L
Drain to Source Voltage200V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)260mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)540pF
Gate Charge(Qg)16nC@10V
TypeN-Channel
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Introduction

AI Translation

NCE0208KA utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 200V, ID = 8A
  • RDS(ON) < 300 mΩ (at VGS = 10V) (typical: 260 mΩ)
  • High-density cell design for ultra-low RDS(ON)
  • Fully characterized avalanche voltage and current
  • Low gate-to-drain charge for reduced switching losses

Applications

AI Translation
  • Power switch applications
  • Hard switching and high-frequency circuits
  • Uninterruptible power supplies