LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
HXY MOSFET H2N7002SDW1T1G product image
  • H2N7002SDW1T1G thumbnail 1
  • H2N7002SDW1T1G thumbnail 2
  • H2N7002SDW1T1G thumbnail 3
  • Pinout
  • Footprint
Images for reference only

HXY MOSFET H2N7002SDW1T1GRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
H2N7002SDW1T1G
LCSC Part #
C50177034
Packaging
SOT-363
Customer #
Key Attributes
MOSFET N-CH 80V 115mA SOT-363
Datasheetpdf iconHXY MOSFET H2N7002SDW1T1G
In-Stock: 60
60 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0279$ 0.56
200+$ 0.0217$ 4.34
600+$ 0.0183$ 10.98
3,000+$ 0.0163$ 48.90
9,000+$ 0.0145$ 130.50
21,000+$ 0.0135$ 283.50
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOT-363
ConfigurationStandalone
Drain to Source Voltage60V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)115mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)1.3Ω@10V
Number2 N-Channel
Input Capacitance(Ciss)50pF
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The H2N7002SDW1T1G utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation down to 4.5V gate voltage. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • VDS = 60V, ID = 0.115A
  • RDS(ON) < 3Ω @ VGS = 10V

Applications

AI Translation
  • Wireless charging
  • Boost driver
  • Brushless motor