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HXY MOSFET AO3413 product image
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HXY MOSFET AO3413RoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
AO3413
LCSC Part #
C50177027
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 4.2A SOT-23
Datasheetpdf iconHXY MOSFET AO3413
In-Stock: 170
170 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0674$ 0.0540$ 0.54
100+$ 0.0537$ 0.0430$ 4.30
300+$ 0.0469$ 0.0376$ 11.28
3,000+$ 0.0417$ 0.0334$ 100.20
6,000+$ 0.0376$ 0.0301$ 180.60
9,000+$ 0.0356$ 0.0285$ 256.50
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOT-23
ConfigurationStandalone
Drain to Source Voltage20V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.7W
RDS(on)48mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)190pF
Number1 P-Channel
Input Capacitance(Ciss)740pF
Gate Charge(Qg)7.8nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The AO3413 utilizes advanced trench technology to achieve excellent on-resistance RDS(ON), low gate charge, and operates at gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Features

AI Translation
  • Drain-source voltage VDS = -20V, drain current ID = -4.2A
  • On-resistance RDS(ON) = 55mΩ at gate-source voltage VGS = -4.5V
  • On-resistance RDS(ON) = 75mΩ at gate-source voltage VGS = -2.5V

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management