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BOYAMICRO BY25D40ESMIG(R) product image
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BOYAMICRO BY25D40ESMIG(R)RoHS

Manufacturer
BOYAMICROAsian Brands
MPN
BY25D40ESMIG(R)
LCSC Part #
C50176339
Packaging
USON-8(2x3)
Customer #
Key Attributes
4Mbit 2.7V~3.6V 108MHz SPI USON-8(2x3) Memory (ICs) RoHS
Datasheetpdf iconBOYAMICRO BY25D40ESMIG(R)
In-Stock: 135
135 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1008$ 0.50
50+$ 0.0986$ 4.93
150+$ 0.0971$ 14.57
500+$ 0.0956$ 47.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerBOYAMICRO
PackagingUSON-8(2x3)
Memory Size4Mbit
Voltage - Supply2.7V~3.6V
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency108MHz
FeaturesWrite enable latch;Power-on reset;Hardware write protection;Software write protection
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)300ms
Write Cycle Time(tWC)15ms
Page Programming Time (Tpp)800us
InterfaceSPI
Standby Supply Current5uA
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BY25D40ES is a 4Mb SPI Flash memory supporting Dual SPI mode, featuring serial clock, chip select, and serial data input/output pins. The data transfer rate in dual output mode reaches up to 108Mbps. The device operates from a single low-voltage supply with a voltage range of 2.7V~3.6V. In addition, the device supports JEDEC-standard manufacturer and device identification codes.

Features

AI Translation
  • Serial Peripheral Interface
  • Standard SPI: SCLK, /CS, SI, SO, /WP
  • Dual SPI: SCLK, /CS, IO0, IO1, /WP
  • Read
  • Normal Read (Serial): 55MHz clock rate
  • Fast Read (Serial): 108MHz clock rate
  • Dual Read: 108MHz clock rate
  • Program
  • Serial input page program, 256 bytes maximum
  • Erase
  • Block Erase (64/32 KB)
  • Sector Erase (4 KB)
  • Chip Erase
  • Program/Erase Speed
  • Page program time: 0.8ms typical
  • Sector erase time: 100ms typical
  • Block erase time: 0.3/0.5s typical
  • Chip erase time: 3s typical
  • Flexible Architecture
  • 4K-byte sectors
  • 32/64K-byte blocks
  • Low Power Consumption
  • Maximum operating current 20mA
  • Maximum power-down current 5uA
  • Software/Hardware Write Protection
  • Protection enabled/disabled via WP pin
  • Software write protection for all or part of memory
  • Selectable top or bottom, sector or block
  • Single Supply Voltage
  • Full voltage range: 2.7~3.6V
  • Temperature Range
  • Commercial (0°C~+70°C)
  • Industrial (-40°C~+85°C)
  • Endurance/Data Retention
  • Typical 100,000 program-erase cycles per sector
  • Typical 20-year data retention
  • Advanced Features
  • 128-bit identification code per device