ST TIP142T
| Manufacturer | |
| MPN | TIP142T |
| LCSC Part # | C501105 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 100V 1000 NPN 10A TO-220 Single Bipolar Transistors RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Current - Collector Cutoff | 1mA | |
| Vbe On(VBE(on)) | 3V | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 80W | |
| type | NPN | |
| Current - Collector(Ic) | 10A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 3V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are manufactured using a planar process with a "base island" layout and a monolithic Darlington configuration. The resulting transistors exhibit extremely high gain performance and very low saturation voltage.
Features
AI Translation
- Monolithic Darlington configuration
- Integrated inverse-parallel collector-emitter diode
Applications
AI Translation
- Linear and switching industrial equipment
In-Stock: 783
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6229 | $ 1.62 |
| 10+ | $ 1.3806 | $ 13.81 |
| 30+ | $ 1.2473 | $ 37.42 |
| 100+ | $ 1.0603 | $ 106.03 |
| 500+ | $ 0.9936 | $ 496.80 |
| 1,000+ | $ 0.9627 | $ 962.70 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Current - Collector Cutoff | 1mA | |
| Vbe On(VBE(on)) | 3V | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 80W | |
| type | NPN | |
| Current - Collector(Ic) | 10A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 3V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are manufactured using a planar process with a "base island" layout and a monolithic Darlington configuration. The resulting transistors exhibit extremely high gain performance and very low saturation voltage.
Features
AI Translation
- Monolithic Darlington configuration
- Integrated inverse-parallel collector-emitter diode
Applications
AI Translation
- Linear and switching industrial equipment
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



