ST STW15N95K5
| Manufacturer | |
| MPN | STW15N95K5 |
| LCSC Part # | C501075 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | MOSFET N-CH 950V 12A TO-247 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Drain to Source Voltage | 950V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 170W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 855pF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
Features
AI Translation
- TO-220 worldwide best RDS(on)
- Worldwide best FOM (figure of merit)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
Applications
AI Translation
- Switching applications
In-Stock: 85
85 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 4.5254 | $ 4.53 |
| 10+ | $ 3.882 | $ 38.82 |
| 30+ | $ 3.4985 | $ 104.96 |
| 100+ | $ 3.1101 | $ 311.01 |
| 500+ | $ 2.9314 | $ 1465.70 |
| 1,000+ | $ 2.8518 | $ 2851.80 |
Standard Packaging30/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Drain to Source Voltage | 950V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 170W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 855pF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
Features
AI Translation
- TO-220 worldwide best RDS(on)
- Worldwide best FOM (figure of merit)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
Applications
AI Translation
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



