ST STTH2L06
| Manufacturer | |
| MPN | STTH2L06 |
| LCSC Part # | C501064 |
| Packaging | DO-41 |
| Customer # | |
| Key Attributes | 60ns 600V 1 Independent 1.3V@2A 2A DO-41 Single Diodes RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | ST | |
| Packaging | DO-41 | |
| Reverse Recovery Time (trr) | 60ns | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | - | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.3V@2A | |
| Reverse Leakage Current (Ir) | 2uA@600V | |
| Non-Repetitive Peak Forward Surge Current | 45A | |
| Current - Rectified | 2A |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The STTH2L06 is using ST Turbo 2 600 V planar Pt doping technology. It is specially suited for SMPS and base drive transistor circuits. Packaged in axial, SMA and SMB, this device is intended for use in high frequency inverters, free wheeling and polarity protection.
Features
AI Translation
- Very low conduction losses
- Negligible switching losses
- Low forward and reverse recovery times
- High junction temperature
Applications
AI Translation
- SMPS
- base drive transistor circuits
- high frequency inverters
- free wheeling
- polarity protection
In-Stock: 650
650 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3471 | $ 1.74 |
| 50+ | $ 0.2821 | $ 14.11 |
| 150+ | $ 0.2543 | $ 38.15 |
| 500+ | $ 0.2195 | $ 109.75 |
| 2,000+ | $ 0.204 | $ 408.00 |
| 4,000+ | $ 0.1948 | $ 779.20 |
Standard Packaging2000/Full Box | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | ST | |
| Packaging | DO-41 | |
| Reverse Recovery Time (trr) | 60ns | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | - | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.3V@2A | |
| Reverse Leakage Current (Ir) | 2uA@600V | |
| Non-Repetitive Peak Forward Surge Current | 45A | |
| Current - Rectified | 2A |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The STTH2L06 is using ST Turbo 2 600 V planar Pt doping technology. It is specially suited for SMPS and base drive transistor circuits. Packaged in axial, SMA and SMB, this device is intended for use in high frequency inverters, free wheeling and polarity protection.
Features
AI Translation
- Very low conduction losses
- Negligible switching losses
- Low forward and reverse recovery times
- High junction temperature
Applications
AI Translation
- SMPS
- base drive transistor circuits
- high frequency inverters
- free wheeling
- polarity protection
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



