ST STP80NF10FP
| Manufacturer | |
| MPN | STP80NF10FP |
| LCSC Part # | C501049 |
| Packaging | TO-220FP |
| Customer # | |
| Key Attributes | 100V 4V 45W 15mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | - | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.3nF | |
| Gate Charge(Qg) | 189nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This family of power MOSFETs, realized using the proprietary STripFET process, has been specifically designed to minimize input capacitance and gate charge. As a result, it is suitable as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computing applications. It is also suitable for any application where low gate charge drive requirements are needed.
Features
- Excellent dv/dt capability
- 100% avalanche tested
- Application-oriented characterization
Applications
- Switching applications
- TO-220FP
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.0461 | $ 2.05 |
| 10+ | $ 1.7591 | $ 17.59 |
| 50+ | $ 1.5798 | $ 78.99 |
| 100+ | $ 1.3972 | $ 139.72 |
| 500+ | $ 1.3141 | $ 657.05 |
| 1,000+ | $ 1.2782 | $ 1278.20 |
| 2,000+ | $ 1.2635 | $ 2527.00 |
| 4,000+ | $ 1.2537 | $ 5014.80 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | - | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.3nF | |
| Gate Charge(Qg) | 189nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This family of power MOSFETs, realized using the proprietary STripFET process, has been specifically designed to minimize input capacitance and gate charge. As a result, it is suitable as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computing applications. It is also suitable for any application where low gate charge drive requirements are needed.
Features
- Excellent dv/dt capability
- 100% avalanche tested
- Application-oriented characterization
Applications
- Switching applications
- TO-220FP
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



