ST STF5N95K3
| Manufacturer | |
| MPN | STF5N95K3 |
| LCSC Part # | C500989 |
| Packaging | TO-220FP |
| Customer # | |
| Key Attributes | MOSFET N-CH 950V 4A TO-220FP |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Drain to Source Voltage | 950V | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF | |
| RDS(on) | 3.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 460pF | |
| Gate Charge(Qg) | 19nC@760V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Features
AI Translation
- 100% avalanche tested
- Extremely large avalanche performance
- Gate charge minimized
- Very low intrinsic capacitances
- Zener-protected
Applications
AI Translation
- Switching applications
In-Stock: 532
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.0292 | $ 2.03 |
| 10+ | $ 1.7758 | $ 17.76 |
| 50+ | $ 1.6166 | $ 80.83 |
| 100+ | $ 1.4541 | $ 145.41 |
| 500+ | $ 1.381 | $ 690.50 |
| 1,000+ | $ 1.3501 | $ 1350.10 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Drain to Source Voltage | 950V | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF | |
| RDS(on) | 3.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 460pF | |
| Gate Charge(Qg) | 19nC@760V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Features
AI Translation
- 100% avalanche tested
- Extremely large avalanche performance
- Gate charge minimized
- Very low intrinsic capacitances
- Zener-protected
Applications
AI Translation
- Switching applications
C500989 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



