ST STD6N62K3
| Manufacturer | |
| MPN | STD6N62K3 |
| LCSC Part # | C500962 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 620V 5.5A DPAK |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 620V | |
| Output Capacitance(Coss) | 100pF | |
| Current - Continuous Drain(Id) | 5.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 950mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 875pF | |
| Gate Charge(Qg) | 34nC | |
| Vgs | ±30V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MDmesh K3 Power MOSFET is the result of improvements applied to MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Features
AI Translation
- 100% avalanche tested
- Extremely high dv/dt capability
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
Applications
AI Translation
- Switching applications
In-Stock: 42
42 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.8839 | $ 2.88 |
| 10+ | $ 2.8343 | $ 28.34 |
| 30+ | $ 2.8003 | $ 84.01 |
| 100+ | $ 2.7678 | $ 276.78 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 620V | |
| Output Capacitance(Coss) | 100pF | |
| Current - Continuous Drain(Id) | 5.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 950mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 875pF | |
| Gate Charge(Qg) | 34nC | |
| Vgs | ±30V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MDmesh K3 Power MOSFET is the result of improvements applied to MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Features
AI Translation
- 100% avalanche tested
- Extremely high dv/dt capability
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
Applications
AI Translation
- Switching applications
C500962 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |


