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ST STD5NM60T4
| Manufacturer | |
| MPN | STD5NM60T4 |
| LCSC Part # | C500961 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 5A DPAK |
| Datasheet |  ST STD5NM60T4 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 18nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features
- 100% avalanche tested
- HIgh dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1521 | $ 1.15 |
| 10+ | $ 0.975 | $ 9.75 |
| 30+ | $ 0.8856 | $ 26.57 |
| 100+ | $ 0.7962 | $ 79.62 |
| 500+ | $ 0.7426 | $ 371.30 |
| 1,000+ | $ 0.7166 | $ 716.60 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 18nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features
- 100% avalanche tested
- HIgh dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |