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ST STD3N40K3RoHS

Manufacturer
ST
MPN
STD3N40K3
LCSC Part #
C500955
Packaging
DPAK
Customer #
Key Attributes
400V 2A 3V 30W 2.7Ω@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS
Datasheetpdf iconST STD3N40K3
In-Stock: 120
120 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.8304$ 1.83
10+$ 1.7884$ 17.88
30+$ 1.7609$ 52.83
100+$ 1.7334$ 173.34
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage400V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)2.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)165pF
Gate Charge(Qg)11nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This SuperMESH3™ power MOSFET is the result of improvements to STMicroelectronics' SuperMESH™ technology, combined with a newly optimized vertical structure. The device features ultra-low on-resistance, excellent dynamic performance, and high avalanche capability, making it suitable for the most demanding applications.

Features

AI Translation
  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Minimized gate charge
  • Ultra-low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener protection

Applications

AI Translation
  • Switching applications