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ST STB15N80K5RoHS

Manufacturer
ST
MPN
STB15N80K5
LCSC Part #
C500932
Packaging
D2PAK
Customer #
Key Attributes
MOSFET N-CH 800V 14A D2PAK
Datasheetpdf iconST STB15N80K5
In-Stock: 572
572 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 3.2551$ 3.26
10+$ 3.0782$ 30.78
30+$ 2.9727$ 89.18
100+$ 2.8672$ 286.72
500+$ 2.8169$ 1408.45
1,000+$ 2.7958$ 2795.80
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingD2PAK
Drain to Source Voltage800V
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)1.5pF
RDS(on)375mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
Gate Charge(Qg)32nC@640V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

AI Translation
  • Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested Zener-protected

Applications

AI Translation
  • Switching applications