Infineon IRLR3705ZTRPBF
| Manufacturer | |
| MPN | IRLR3705ZTRPBF |
| LCSC Part # | C500525 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 55V 42A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 42A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 130W | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.9nF | |
| Gate Charge(Qg) | 66nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Logic Level
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9766 | $ 0.98 |
| 10+ | $ 0.8138 | $ 8.14 |
| 30+ | $ 0.7324 | $ 21.97 |
| 100+ | $ 0.6511 | $ 65.11 |
| 500+ | $ 0.6022 | $ 301.10 |
| 1,000+ | $ 0.5778 | $ 577.80 |
Standard Packaging2000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 42A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 130W | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.9nF | |
| Gate Charge(Qg) | 66nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Logic Level
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



