Nexperia PBSS4350Z,135
| Manufacturer | |
| MPN | PBSS4350Z,135 |
| LCSC Part # | C49693 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | TRANS NPN 50V 3A SOT-223 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-223 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 3A | |
| Pd - Power Dissipation | 2W | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -65℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 290mV |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z.
Features
AI Translation
- Low collector-emitter saturation voltage
- High collector current capability: ΨC and ICM
- High collector current gain (hFE ) at high lC
- Higher efficiency leading to less heat generation
- Reduced PCB area requirements compared to DPAK.
- AEC-Q101 qualified
Applications
AI Translation
- Power management
- DC/DC converters
- Supply line switching
- Battery charger
- Linear voltage regulation (LDO)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.7182 | $ 0.72 |
| 10+ | $ 0.6242 | $ 6.24 |
| 30+ | $ 0.5836 | $ 17.51 |
| 100+ | $ 0.5334 | $ 53.34 |
| 500+ | $ 0.5107 | $ 255.35 |
| 1,000+ | $ 0.4961 | $ 496.10 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-223 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 3A | |
| Pd - Power Dissipation | 2W | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -65℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 290mV |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z.
Features
AI Translation
- Low collector-emitter saturation voltage
- High collector current capability: ΨC and ICM
- High collector current gain (hFE ) at high lC
- Higher efficiency leading to less heat generation
- Reduced PCB area requirements compared to DPAK.
- AEC-Q101 qualified
Applications
AI Translation
- Power management
- DC/DC converters
- Supply line switching
- Battery charger
- Linear voltage regulation (LDO)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



