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Infineon IRF7329TRPBFRoHS

Manufacturer
Infineon
MPN
IRF7329TRPBF
LCSC Part #
C495786
Packaging
SO-8
Customer #
Key Attributes
MOSFET P-CH ARR 12V 9.2A SO-8
Datasheetpdf iconInfineon IRF7329TRPBF
In-Stock: 68
68 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.8294$ 0.83
10+$ 0.8115$ 8.12
30+$ 0.7985$ 23.96
100+$ 0.7871$ 78.71
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerInfineon
PackagingSO-8
Current - Continuous Drain(Id)9.2A
Pd - Power Dissipation2W
RDS(on)17mΩ@4.5V
Gate Threshold Voltage (Vgs(th))400mV
Drain to Source Voltage12V
Reverse Transfer Capacitance (Crss@Vds)640pF
Number2 P-Channel
Input Capacitance(Ciss)3.45nF
Gate Charge(Qg)57nC
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

New P-Channel HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique

Features

AI Translation
  • Trench technology
  • Ultra-low on-resistance
  • Dual P-channel MOSFET
  • Low profile (<1.8mm)
  • Tape and reel available
  • Lead-free